Methods to prepare silicon-containing films

ABSTRACT

Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

CROSS REFERENCE TO RELATED APPLICATION

The present patent application claims the benefit of prior U.S.Provisional Patent Application Ser. No. 61/301,375 filed Feb. 4, 2010.

BACKGROUND OF THE INVENTION

Disclosed herein are methods and compositions to preparesilicon-containing materials or films, such as but not limited to,stoichiometric or non-stoichiometric silicon oxide, silicon oxynitride,or silicon oxycarbonitride films, for use in various electronicapplications.

Thin films of silicon oxide are commonly used as dielectrics insemiconductor manufacturing because of their dielectric properties. Inthe manufacturing of silicon-based semiconductor devices, silicon oxidefilms can be used as gate insulations, diffusion masks, sidewallspacers, hard mask, anti-reflection coating, passivation andencapsulation, and a variety of other uses. Silicon oxide films are alsobecoming increasingly important for passivation of other compoundsemiconductor devices.

Other elements besides silica and oxygen may be present in silicondioxide films. These other elements may sometimes be intentionally addedinto the compositional mixture and/or deposition process depending uponthe resultant application of the film or desired end-properties. Forexample, the element nitrogen (N) may be added to the silicon oxide filmto form a silicon oxynitride film that may provide a certain dielectricperformance such as lower leakage current. The element germanium (Ge)may be added to the silicon oxide film to provide a Ge-doped siliconoxide that may reduce the deposition temperature of the film. Stillother elements such as boron (B) or carbon (C) may be added to thesilicon oxide film to increase the etch resistance. Depending upon theapplication, however, certain elements in the film may be undesirableeven at lower concentration levels.

For example, when silicon dioxide films are used as etch stop or simplyas dielectric layer under photoresists of deep-ultraviolet (DUV), smallamounts of nitrogen in the film may interact with the DUV photoresist,chemically amplifying the material properties of the photoresist orpoisoning the photoresist and rendering a portion of the photoresistinsoluble in the developer. As a result, residual photoresist may remainon patterned feature edges or sidewalls of the structure. This may bedetrimental to photolithographic patterning process of the semiconductordevices.

Another example of nitrogen free silicon oxide films can be found in theapplication of anti-reflection coatings (ARC). The ARC suppresses thereflections off of the underlying material layer during resist imagingthereby providing accurate pattern replication in the layer of energysensitive resist. However, conventional ARC materials contain nitrogensuch as, for example, silicon nitride and titanium nitride. The presenceof nitrogen in the ARC layer may chemically alter the composition ofphotoresist material. The chemical reaction between nitrogen and thephotoresist material may be referred to as “photoresist poisoning”.Photoresist poisoned material that subjected to typical patterning stepscould result in imprecisely formed features in the photoresist orexcessive residual photoresist after patterning, both of which candetrimentally affect PR processes, such as etch processes. For example,nitrogen may neutralize acid near a photoresist and ARC interface andresult in residue formation, known as footing, which can further resultin curved or round aspects at the interface of the bottom and sidewallsof features rather than desired right angle.

For several applications, a plasma enhanced chemical vapor depositionprocess (“PECVD”) is used to produce silicon oxide films at lowerdeposition temperatures than typical thermal chemical vapor deposition(“CVD”) processes. Tetraethyloxysilane (“TEOS”) having the molecularformula Si(OC₂H₅)₄ is a common precursor that can be used, incombination with one or more oxygen sources such as, but not limited toO₂ or O₃, for the PECVD deposition of silicon oxide films which haveminimal residual carbon contamination. TEOS is supplied as a stable,inert, high vapor pressure liquid, and is less hazardous than othersilicon-containing precursors such as SiH₄.

There is a general drive to move to lower deposition temperatures (e.g.,below 400° C.) for one or more of the following reasons: cost (e.g., theability to use cheaper substrates) and thermal budget (e.g., due tointegration of temperature-sensitive high performance films). Furtherfor PECVD TEOS films, the gap fill and conformality may be relativelybetter at lower temperatures. However, the film quality of the PECVDTEOS film may be poorer because the films do not have a stoichiometriccomposition, are hydrogen-rich, have a low film density, and/or exhibita fast etch rate. Hence, there is a need for alternative precursors withbetter performance than TEOS.

BRIEF SUMMARY OF THE INVENTION

Described herein are methods of forming materials or films comprisingsilicon and oxygen that are free of critical elements such as nitrogen,carbon, halogens, and hydrogen, or, alternatively, comprises from about0 to about 30 atomic weight percent of nitrogen and/or comprises fromabout 0 to about 30 atomic weight percent of carbon, as measured byX-ray photoelectron spectroscopy (XPS), and exhibit a % ofnon-uniformity of 5% or less. The % non-uniformity can be measured usingthe standard equation: % non-uniformity=((max−min)/(2*mean)). The filmsdeposited using the method and precursors described herein are highlyuniform without, in certain instances, relying on the assistance of atemperature, plasma, plasma-like method, or combinations thereof. Alsodisclosed herein are the methods to form dielectric films or coatingsthat are substantially free of nitrogen and/or substantially free ofcarbon, or alternatively contain relatively low amounts of nitrogen andcarbon, on an object to be processed, such as, for example, asemiconductor wafer.

In alternative embodiments, the method and precursor described hereincan provide a material having a relatively low nitrogen content whichprovides a nitrogen-doped oxide material with a controlled composition.In alternative embodiments, the method and precursor described hereincan provide a material having a relatively low carbon content whichprovides a carbon-doped oxide material with a controlled composition. Inthese embodiments, the material may comprise from about 0 to about 30atomic weight percent nitrogen and/or carbon as measured by XPS. Incertain embodiments, the precursors used are capable of making SiO₂materials of very high purity, with non-detectable amounts of otherelements including carbon, nitrogen, chlorine and halogens, and otherspecies quantifiable by XPS.

In one aspect, there is provided a method for forming a film comprisingsilicon and oxygen on at least one surface of a substrate comprising:

providing the at least one surface of the substrate in a reactionchamber; and

forming the film on the at least one surface by a deposition processchosen from a chemical vapor deposition process and an atomic layerdeposition process using a silicon precursor comprising at least oneselected from the group of precursors having the following Formulas I,II, and III:

where R, R¹, and R² in Formulas I, II, and III are each independently analkyl group, an aryl, an acyl group, or combinations thereof; andoptionally an oxygen source wherein the dielectric film comprises fromless than about 5 atomic % nitrogen or carbon as measured by XPS. Inembodiments wherein the film comprises nitrogen or carbon, a nitrogenand/or carbon source may be also introduced during the forming step. Inthese embodiments, exemplary nitrogen sources including, but are notlimited to, materials such as NH₃, N₂O, NH₂(CH₃), and combinationsthereof may be introduced during the forming step and/or an additionalintroducing step. The carbon and nitrogen sources may be one in thesame.

In another aspect, there is provided a method of forming a filmcomprising silicon and oxygen via an atomic layer deposition (ALD)process, the method comprising the steps of:

a. placing a substrate into an ALD reactor;

b. introducing into the reactor a silicon precursor comprising at leastone selected from the group of precursors having the following FormulasI, II, and III:

where R, R¹, and R² in Formulas I, II, and III are each independently analkyl group, an aryl, an acyl group, or combinations thereof andoptionally an oxygen source;

c. purging the ALD reactor with a gas;

d. introducing an oxygen source into the ALD reactor;

e. purging the ALD reactor with a gas; and

f. repeating the steps b through d until a desired thickness of the filmis obtained wherein the dielectric film comprises less than about 5atomic weight % carbon and/or nitrogen as measured by XPS.

In a further aspect, there is provided a method of forming a filmcomprising silicon oxide onto at least a surface of a substrate using anALD or CVD process comprising:

a. placing a substrate into a reactor; and

b. introducing into the reactor a silicon precursor comprising at leastone selected from the group of precursors having the following FormulasI, II, and III:

where R, R¹, and R² in Formulas I, II, and III are each independently analkyl group, an aryl, an acyl group, or combinations thereof andoptionally an oxygen source to deposit the film onto the at least onesurface wherein the dielectric film comprises carbon and/or nitrogenfrom about 0 atomic weight % to about 30 atomic weight % as measured byXPS.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 provides the results of X-ray photoelectron spectroscopy (XPS)for a film deposited using the method described in Example 1.

FIG. 2 provides the thickness uniformity for three exemplary filmsdeposited using t-butyl silane, diethylsilane and di-tert-butoxysilane(DTBOS) in accordance with the method described in Example 2.

FIG. 3 provides the plot of the dielectric constant obtained from anexemplary film that was deposited using the precursor DTBOS describedusing one of the process conditions provided in Table 1

FIG. 4 shows a comparison of Wet Etch Rate (WER) of films deposited withBL1 condition described in the Examples at 3 different depositionstemperatures or 400° C., 300° C., 200° C. FIG. 4 shows that DTBOSdeposited films had lower WER than TEOS films at all temperatures.

FIG. 5 provides the leakage current vs. electric field plots for TEOSvs. DTBOS at 200° C. and 300° C. depositions for the BL1 conditiondescribed in Table 3 of Example 4.

FIG. 6 provides the leakage current vs. electric field plots for TEOSvs. DTBOS at 200° C. and 300° C. depositions for the BL2 conditiondescribed in Table 3 of Example 4.

FIG. 7 provides the leakage current vs. electric field plots for TEOSvs. DTBOS at 200° C. and 300° C. depositions for the BL1 conditiondescribed in Table 3 of Example 4.

FIG. 8 provides dynamic secondary ion mass spectrometry data (D-SIMS) ofDTBOS compared to bis(tertiarybutyl)aminosilane (BTBAS) in CVD filmsdeposited from those precursors.

DETAILED DESCRIPTION OF THE INVENTION

Described herein is a method to form a highly uniform dielectric film(e.g., exhibits a % of non-uniformity of % of non-uniformity of 5% orless as measured using the standard equation: %non-uniformity=(max−min)/(2*mean). The dielectric films made using themethod described herein generally predominantly contain silicon andoxygen. In certain embodiments, the dielectric film is substantiallyfree of any other elements, such as nitrogen, carbon, chlorine andhalogens, and hydrogen. The term “substantially free” as used hereinmeans a film that comprises 2 atomic weight % or less of nitrogen asmeasured by XPS. In other embodiments, the dielectric film comprisesother elements such as nitrogen and/or carbon in amounts ranging fromabout 2 atomic % to about 30 atomic %, and may contain other elementsdepending upon process conditions or additives used in the process. Incertain embodiments, the method described herein does not require aplasma assist and/or is conducted at a low temperature (e.g., 600° C. orless). In an alternative embodiment, the method described herein isconducted using a low temperature (e.g., 450° C. or less) thermalprocess. The films described herein are dielectric films meaning thatthey typically exhibit a dielectric constant of 7 or less or 6 or lessor 5 or less. In certain embodiments the materials produced may alsocontain elements such as boron, aluminium, and/or other elements thatmay contribute to a preferred feature of the material. These may beintroduced into the process as elements of separate additives or assubstituents of the main precursor.

The method used to form the dielectric films or coatings are depositionprocesses. Examples of suitable deposition processes for the methoddisclosed herein include, but are not limited to, cyclic CVD (CCVD),MOCVD (Metal Organic CVD), thermal chemical vapor deposition, plasmaenhanced chemical vapor deposition (“PECVD”), high density PECVD, photonassisted CVD, plasma-photon assisted (“PPECVD”), cryogenic chemicalvapor deposition, chemical assisted vapor deposition, hot-filamentchemical vapor deposition, CVD of a liquid polymer precursor, depositionfrom supercritical fluids, and low energy CVD (LECVD). In certainembodiments, the metal containing films are deposited via plasmaenhanced ALD (PEALD) or plasma enhanced cyclic CVD (PECCVD) process. Asused herein, the term “chemical vapor deposition processes” refers toany process wherein a substrate is exposed to one or more volatileprecursors, which react and/or decompose on the substrate surface toproduce the desired deposition. As used herein, the term “atomic layerdeposition process” refers to a self-limiting (e.g., the amount of filmmaterial deposited in each reaction cycle is constant), sequentialsurface chemistry that deposits conformal films or materials ontosubstrates of varying compositions. Although the precursors, reagentsand sources used herein may be sometimes described as “gaseous”, it isunderstood that the precursors can be either liquid or solid which aretransported with or without an inert gas into the reactor via directvaporization, bubbling or sublimation. In some case, the vaporizedprecursors can pass through a plasma generator. In one embodiment, thedielectric film is deposited using an ALD process. In anotherembodiment, the dielectric film is deposited using a CCVD process. In afurther embodiment, the dielectric film is deposited using a thermal CVDprocess. In another embodiment, the precursor may condensed onto thesubstrate with minimal reaction taking place, followed by apost-treatment in order to render the material solid and aid in adhesionto the article being deposited on. It may be appreciated that there aremany ways by which process conditions may be used to form a film from achemical precursor, but that the final properties of the depositedmaterial can be uniquely defined by the nature of the chemical precursoror additives used in combination with these precursors.

In certain embodiments, the method disclosed herein avoids pre-reactionof the precursors by using ALD or CCVD methods that separate theprecursors prior to and/or during the introduction to the reactor. Inthis connection, deposition techniques such as an ALD or CCVD processesare used to deposit the dielectric film. In one embodiment, the film isdeposited via an ALD process by exposing the substrate surfacealternatively to the one or more the silicon-containing precursor,oxygen source, or other precursor or reagent. Film growth proceeds byself-limiting control of surface reaction, the pulse length of eachprecursor or reagent, and the deposition temperature. However, once thesurface of the substrate is saturated, the film growth ceases.

In certain embodiments, the precursor is introduced neat, or withoutadditional reactants or additives, to condense, fill features, orplanarize a surface, followed by a reactant step to make the precursorreact or to form a solid. In certain embodiments, this process usesoxidation processes, catalysts, or other energy forms (chemical,thermal, radiative, plasma, photonic, or any other ionizing ornon-ionizing radiative energy) to modify the precursor and optionaladditives to form a solid material.

To form dielectric films comprising silicon and oxygen that aresubstantially nitrogen-free, it is desirable that the silicon-containingprecursor is free of nitrogen. It is also desirable, in certainembodiments, that the precursors be reactive enough to deposit a film ata relatively low temperature (e.g., 400° C. or less). Despite a desirefor precursor reactivity, the precursor must also be stable enough tonot degrade or change to any significant extent over time (e.g., lessthan 1% change per year) Further, in these or other embodiments, it isdesirable that the deposition method be performed in the absence ofplasma. Without being bound to theory, it is believed that thereactivity of substituted silanes toward oxidation is proportional tothe number of hydrogen atoms that are connected to the silicon atom.

The method disclosed herein forms the dielectric film using asilicon-containing precursor wherein the silicon-containing precursor isselected from a silicon precursor comprising at least one selected fromthe group of precursors having the following Formulas I, II, and III:

where R, R¹, and R² in Formulas I, II, and III are each independently analkyl group, an aryl, an acyl group, or combinations thereof; optionallyan additional silicon-containing precursor, optionally an oxygen sourceor reagent, and optionally a reducing agent. The selection of precursormaterials for deposition depends upon the desired resultant dielectricmaterial or film. For example, a precursor material may be chosen forits content of chemical elements, its stoichiometric ratios of thechemical elements, and/or the resultant dielectric film or coating thatare formed under CVD. The precursor material may also be chosen forvarious other characteristics such as, for example, cost, stability,non-toxicity, handling characteristics, ability to maintain liquid phaseat room temperature, volatility, molecular weight, or combinationsthereof.

In one embodiment of the method disclosed herein, a dielectric film isformed using a silicon precursor comprising at least one selected fromthe group of precursors having the following Formulas I, II, and III:

where R, R¹, and R² in Formulas I, II, and III are each independently analkyl group, an aryl, an acyl group, or combinations thereof. InFormulas I through III and throughout the description, the term “alkyl”denotes a linear, branched, or cyclic functional group having from 1 to20, or from 1 to 12 or from 1 to 6 carbon atoms. Exemplary alkyl groupsinclude but are not limited to methyl, ethyl, propyl, isopropyl, butyl,isobutyl, sec-butyl, tert-butyl, pentyl, hexyl, octyl, decyl, dodecyl,tetradecyl, octadecyl, isopentyl, and tert-pentyl. In Formulas I throughIII and throughout the description, the term “aryl” denotes a cyclicfunctional group having from 6 to 12 carbon atoms. Exemplary aryl groupsinclude but are not limited to phenyl, benzyl, tolyl, and o-xylyl.

In certain embodiments, one or more of the alkyl group, aryl group,and/or acryl group may be substituted or unsubstituted or have one ormore atoms or group of atoms substituted in place of a hydrogen atom.Exemplary substituents include, but are not limited to, oxygen, sulfur,halogen atoms (e.g., F, Cl, I, or Br), nitrogen, boron, and phosphorous.In certain embodiments, the silicon-containing precursor having FormulaI through III may have one or more substituents comprising oxygen atoms.In these embodiments, the need for an oxygen source during thedeposition process may be avoided. In other embodiments, thesilicon-containing precursor having Formula I through III has one ofmore substituents comprising oxygen atoms and also uses an oxygensource.

In certain embodiments, one or more of the alkyl groups, aryl groups,and/or acyl groups may be saturated or unsaturated. In embodimentswherein the one or more alkyl group or aryl group is unsaturated, itcontains one or more double or triple bonds.

Examples of silicon-containing precursors having Formula I include:tertiarybutoxysilane, isopropoxysilane, ethoxysilane, n-butoxysilane,isobutoxysilane, methoxysilane, or phenoxysilane. Examples ofsilicon-containing precursors having Formula II include:di-tertiary-butoxysilane, diiso-propoxysilane, diethoxysilane,di-n-butoxysilane, diisobutoxysilane, dimethoxysilane, ordiphenoxysilane. Examples of silicon-containing precursors havingFormula III include: tri-tertiary-butoxysilane, triiso-propoxysilane,triethoxysilane, tri-n-butoxysilane, triiso-butoxysilane,trimethoxysilane, or triphenoxysilane. In one embodiment of the methoddescribed herein, the silicon-containing precursor comprises at leastone of the following precursors:

In one particular embodiment, the silicon-containing precursor comprisesdi-tert-butoxysilane.

In certain embodiments, the method described herein further comprisesone or more additional silicon-containing precursors other than thesilicon-containing precursor having the above Formulas I through IIIdescribed above. Examples of additional silicon-containing precursorsinclude, but are not limited to, organo-silicon compounds such assiloxanes (e.g., hexamethyl disiloxane (HMDSO) and dimethyl siloxane(DMSO)); organosilanes (e.g., methylsilane; dimethylsilane; vinyltrimethylsilane; trimethylsilane; tetramethylsilane; ethylsilane;disilylmethane; 2,4-disilapentane; 1,2-disilanoethane; 2,5-disilahexane;2,2-disilylpropane; 1,3,5-trisilacyclohexane, and fluorinatedderivatives of these compounds; phenyl-containing organo-siliconcompounds (e.g., dimethylphenylsilane and diphenylmethylsilane);oxygen-containing organo-silicon compounds, e.g.,dimethyldimethoxysilane; 1,3,5,7-tetramethylcyclotetrasiloxane;1,1,3,3-tetramethyldisiloxane; 1,3,5,7-tetrasila-4-oxo-heptane;2,4,6,8-tetrasila-3,7-dioxo-nonane;2,2-dimethyl-2,4,6,8-tetrasila-3,7-dioxo-nonane;octamethylcyclotetrasiloxane; [1,3,5,7,9]-pentamethylcyclopentasiloxane;1,3,5,7-tetrasila-2,6-dioxo-cyclooctane; hexamethylcyclotrisiloxane;1,3-dimethyldisiloxane; 1,3,5,7,9-pentamethylcyclopentasiloxane;hexamethoxydisiloxane, and fluorinated derivatives of these compounds;and nitrogen-containing organo-silicon compounds (e.g.,hexamethyldisilazane; divinyltetramethyldisilizane;hexamethylcyclotrisilazane; dimethylbis(N-methylacetamido)silane;dimethylbis-(N-ethylacetamido)silane; bis(tertiary-butylamino)silane(BTBAS), bis(tertiary-butylamino)methylsilane (BTBMS),bis(N-methylacetamido)methylvivylsilane; bis(N-butylacetamido)methylvivylsilane; tris(N-phenylacetamido)methylsilane;tris(N-ethylacetamido)vinylsilane; tetrakis(N-methylacetamido)silane;bis(diethylaminoxy)diphenylsilane; tris(diethylaminoxy)methylsilane; andbis(trimethylsilyl)carbodiimide).

In certain embodiments, the silicon-containing precursor comprises anitrogen-containing organosilicon precursor having at least one N—Hfragment and at least one Si—H fragment. Suitable precursors containingboth the N—H fragment and the Si—H fragment include, for example,bis(tert-butylamino)silane (BTBAS), tris(tert-butylamino)silane,bis(iso-propylamino)silane, tris(iso-propylamino)silane, and mixturesthereof. In one embodiment, the precursor has the formula(^(R5)NH)_(n)Si^(R) _(6mH4-(n+m)) wherein ^(R5) and ^(R6) are the sameor different and independently selected from the group consisting ofalkyl, vinyl allyl, phenyl, cyclic alkyl, fluoroalkyl, and silylalkyland wherein n is a number ranging from 1 to 3, m is a number rangingfrom 0 to 2, and the sum of “n+m” is a number that is less than or equalto 3. In another embodiment, the silicon-containing precursor comprisesa hydrazinosilane having the formula (R⁷ ₂N—NH)_(x)SiR⁸ _(y)H_(4−(x+y))wherein R⁷ and R⁸ are same or different and independently selected fromthe group consisting of alkyl, vinyl, allyl, phenyl, cyclic alkyl,fluoroalkyl, silylalkyls and wherein x is a number ranging from 1 to 2,y is a number ranging from 0 to 2, and the sum of “x+y” is a number thatis less than or equal to 3. Examples of suitable hydrazinosilaneprecursors include, but are not limited to,bis(1,1-dimethylhydrazino)-silane, tris(1,1-dimethylhydrazino)silane,bis(1,1-dimethylhydrazino)ethylsilane,bis(1,1-dimethylhydrazino)isopropylsilane,bis(1,1-dimethylhydrazino)vinylsilane, and mixtures thereof. In certainembodiments, the precursor or additives further includes halogenatedsilanes, boranes, borazines, borates, and modified versions thereof.

Depending upon the deposition method, in certain embodiments, the one ormore silicon-containing precursors may be introduced into the reactor ata predetermined molar volume, or from about 0.1 to about 1000micromoles. In this or other embodiments, the silicon-containingprecursor may be introduced into the reactor for a predetermined timeperiod, or from about 0.001 to about 500 seconds.

As previously mentioned, some of the dielectric films deposited usingthe methods described herein may be formed in the presence of oxygenusing an oxygen source, reagent or precursor comprising oxygen. Anoxygen source may be introduced into the reactor in the form of at leastone oxygen source and/or may be present incidentally in the otherprecursors used in the deposition process. Suitable oxygen source gasesmay include, for example, water (H₂O) (e.g., deionized water, purifierwater, and/or distilled water), oxygen (O₂), oxygen plasma, ozone (O₃),NO, NO₂, carbon monoxide (CO), carbon dioxide (CO₂) and combinationsthereof. In certain embodiments, the oxygen source comprises an oxygensource gas that is introduced into the reactor at a flow rate typicallyranging from about 1 to about 2000 standard cubic centimeters (sccm),the range thereof being dependent upon the reaction process, desiredmaterial, substrate size, deposition rate, etc. . . . The oxygen sourcecan be introduced prior to the precursor, concurrent with the precursor,sequentially with the precursor in a repeating cyclic fashion, or afterall the precursor has been introduced. In one particular embodiment, theoxygen source comprises water. In embodiments wherein the film isdeposited by an ALD or a cyclic CVD process, the precursor pulse canhave a pulse duration that is greater than 0.01 seconds, and the oxygensource can have a pulse duration that is greater than 0.01 seconds,while the water pulse duration can have a pulse duration that is greaterthan 0.01 seconds. In yet another embodiment, the purge duration betweenthe pulses that can be as low as 0.01 seconds or is continuously pulsedwithout a purge in-between.

The deposition methods disclosed herein may involve one or more purgegases. The purge gas, which is used to purge away unconsumed reactantsand/or reaction byproducts, is—in certain embodiments, an inert gas thatdoes not react with the precursors. Exemplary inert gases include, butare not limited to, Ar, N₂, He, Xe, neon, H₂ and mixtures thereof. Incertain embodiments, a purge gas such as Ar is supplied into the reactorat a flow rate ranging from about 10 to about 2000 sccm for about 0.1 to1000 seconds, thereby purging the unreacted material and any byproductthat may remain in the reactor.

In certain embodiments, such as, for example, for those embodimentswhere the dielectric constant further comprises elements of nitrogenand/or carbon and/or other species, an additional gas such as a nitrogensource gas may be introduced into the reactor. Examples of additives mayinclude, for example, NO, NO₂, ammonia, ammonia plasma, hydrazine,monoalkylhydrazine, dialkylhydrazine, hydrocarbons, heteroatomichydrocarbons, boranes, borates, borazines, and combinations thereof.

In certain embodiments of the method described herein, the temperatureof the reactor or a deposition chamber may range from ambienttemperature (e.g., 25° C.) to about 700° C. Exemplary reactortemperatures for the ALD or CVD deposition include ranges having any oneor more of the following endpoints: 25, 50, 75, 100, 125, 150, 175, 200,225, 250, 275, 300, 325, 350, 375, 400, 425, 450, 475, 500, 525, 550,575, 600, 625, 650, 675, or 700° C. Examples of particular reactortemperature ranges include but are not limited to, 25° C. to 375° C., orfrom 75° C. to 700° C., or from 325° C. to 675° C. In this or otherembodiments, the pressure may range from about 0.1 Torr to about 100Torr or from about 0.1 Torr to about 5 Torr. In one particularembodiment, the dielectric film is deposited using a thermal CVD processat a pressure ranging from 100 mTorr to 600 mTorr. In another particularembodiment, the dielectric film is deposited using an ALD process at atemperature range of 1 Torr or less.

In certain embodiments of the method described herein, the temperatureof the substrate in the reactor or a deposition chamber, may range fromambient temperature (e.g., 25° C.) to about 700° C. Exemplary substratetemperatures for the ALD or CVD deposition include ranges having any oneor more of the following endpoints: 25, 50, 75, 100, 125, 150, 175, 200,225, 250, 275, 300, 325, 350, 375, 400, 425, 450, 475, 500, 525, 550,575, 600, 625, 650, 675, or 700° C. Examples of particular substratetemperature ranges include but are not limited to, 25° C. to 375° C., orfrom 75° C. to 700° C., or from 325° C. to 675° C. In certainembodiments, the substrate temperature may be the same as or in the sametemperature range as the reactor temperature during the deposition. Inother embodiments, the substrate temperature differs from the reactortemperature during the deposition.

The respective step of supplying the precursors, the oxygen source,and/or other precursors, source gases, and/or reagents may be performedby changing the time for supplying them to change the stoichiometriccomposition of the resulting dielectric film.

Energy is applied to the at least one of the precursor, oxygen source,reducing agent, other precursors or combination thereof to inducereaction and to form the dielectric film or coating on the substrate.Such energy can be provided by, but not limited to, thermal, plasma,pulsed plasma, helicon plasma, high density plasma, inductively coupledplasma, X-ray, e-beam, photon, and remote plasma methods. In certainembodiments, a secondary RF frequency source can be used to modify theplasma characteristics at the substrate surface. In embodiments whereinthe deposition involves plasma, the plasma-generated process maycomprise a direct plasma-generated process in which plasma is directlygenerated in the reactor, or alternatively a remote plasma-generatedprocess in which plasma is generated outside of the reactor and suppliedinto the reactor.

The silicon-containing precursors and/or other precursors may bedelivered to the reaction chamber such as a CVD or ALD reactor in avariety of ways. In one embodiment, a liquid delivery system may beutilized. In an alternative embodiment, a combined liquid delivery andflash vaporization process unit may be employed, such as, for example,the turbo vaporizer manufactured by MSP Corporation of Shoreview, Minn.,to enable low volatility materials to be volumetrically delivered,leading to reproducible transport and deposition without thermaldecomposition of the precursor. In liquid delivery formulations, theprecursors described herein may be delivered in neat liquid form, oralternatively, may be employed in solvent formulations or compositionscomprising same. Thus, in certain embodiments the precursor formulationsmay include solvent component(s) of suitable character as may bedesirable and advantageous in a given end use application to form a filmon a substrate.

In one embodiment of the method described herein, a cyclic depositionprocess such as CCVD, ALD, or PEALD may be employed, wherein at leastone silicon-containing precursor having Formulas I through III andcombinations thereof and optionally an oxygen source such as, forexample, ozone, oxygen plasma or water plasma are employed. The gaslines connecting from the precursor canisters to the reaction chamberare heated to one or more temperatures depending upon the processrequirements and the container of the silicon-containing precursorhaving Formula I through III is injected into a vaporizer kept at one ormore temperatures for direct liquid injection. A flow of argon and/orother gas may be employed as a carrier gas to help deliver the vapor ofthe at least one silicon-containing precursor to the reaction chamberduring the precursor pulsing. In certain embodiments, the reactionchamber process pressure is about 1 Torr or less. In a typical ALD orCCVD process, the substrate such as a silicon oxide substrate is heatedon a heater stage in a reaction chamber that is exposed to thesilicon-containing precursor initially to allow the complex tochemically adsorb onto the surface of the substrate. A purge gas such asargon purges away unabsorbed excess complex from the process chamber.After sufficient purging, an oxygen source may be introduced intoreaction chamber to react with the absorbed surface followed by anothergas purge to remove reaction by-products from the chamber. The processcycle can be repeated to achieve the desired film thickness. In this orother embodiments, it is understood that the steps of the methodsdescribed herein may be performed in a variety of orders, may beperformed sequentially or concurrently (e.g., during at least a portionof another step), and any combination thereof. The respective step ofsupplying the precursors and the oxygen source gases may be performed byvarying the duration of the time for supplying them to change thestoichiometric composition of the resulting dielectric film.

In another embodiment of the method disclosed herein, the dielectricfilms is formed using a ALD deposition method that comprises the stepsof:

a. introducing a silicon precursor comprising at least one selected fromthe group of precursors having the following Formulas I, II, and III:

where R, R¹, and R² in Formulas I, II, and III are each independently analkyl group, an aryl, an acyl group, or combinations thereof; and

optionally an oxygen source, a nitrogen source, or combinations thereofand chemisorbing the at least one silicon precursor onto a substrate;

b. purging away the unreacted at least one silicon-containing precursorusing a purge gas;

c. optionally introducing an oxygen source onto the heated substrate toreact with the sorbed at least one silicon-containing precursor; and

d. optionally purging away the unreacted oxygen source.

The above steps define one cycle for the method described herein; andthe cycle can be repeated until the desired thickness of a dielectricfilm is obtained. In this or other embodiments, it is understood thatthe steps of the methods described herein may be performed in a varietyof orders, may be performed sequentially or concurrently (e.g., duringat least a portion of another step), and any combination thereof. Therespective step of supplying the precursor(s) and optionally oxygensource may be performed by varying the duration of the time forsupplying them to change the stoichiometric composition of the resultingdielectric film. For multi-component dielectric films, other precursorssuch as silicon-containing precursors, nitrogen-containing precursors,reducing agents, or other reagents can be alternately introduced intostep “a” into the reactor chamber. In this embodiment, the reactortemperature may range from ambient to 600° C. In this or otherembodiments, the pressure of the reactor may be maintained at 1 Torr orbelow.

In a further embodiment of the method described herein, the dielectricfilm is deposited using a thermal CVD process. In this embodiment, themethod comprises: placing one or more substrates into a reactor which isheated to a temperature ranging from ambient temperature to about 700°C. or from 400 to 700° C.; introducing a silicon precursor comprising atleast one selected from the group of precursors having the followingFormulas I, II, and III:

where R, R¹, and R² in Formulas I, II, and III are each independently analkyl group, an aryl, an acyl group, or combinations thereof; andoptionally a source selected from an oxygen source, a nitrogen source,or combinations thereof into the reactor to deposit a dielectric filmonto the one or more substrates wherein the reactor is maintained at apressure ranging from 100 mTorr to 600 mTorr during the introducingstep. In certain embodiments, the pressure of the CVD reactor can be inthe range of about 0.01 T to about 1 T. The flow rate of the reactivegas such as, for example, O₂ can range from 5 sccm to 200 sccm. The flowrate of the one or more silicon-containing precursor vapor can rangefrom 5 sccm to 200 sccm. The deposition temperature is the same as thereactor wall temperature. It can be in the range of ambient temperatureto about 700° C. or from about 400° C. to about 700° C. The depositiontime is pre-set for the process to yield films with a desired thickness.The deposition rate may be dependent one or more processing parametersincluding but not limited to the deposition temperature, the flow rateof O₂, the flow rate of carrier gas (He), the liquid mass flow of thesilicon-containing precursor, the temperature of the vaporizer, and/orthe pressure of the reactor. The vaporizer temperature can range from20° C. to 150° C. The rate of the deposition of the material can be inthe range of 0.1 nm to 1000 nm per minute. The rate can be controlled byvarying any one of the following non-limiting parameters: depositiontemperature, the vaporizer temperature, the flow of the LFC, the flowrate of the reactive additives and/or the pressure at the CVD reactor,for example.

In yet another embodiment, the method can be performed using a cyclicCVD process. In this embodiment, the same ALD reactor can be used forthe cyclic CVD process. One of the differences in the cyclic CVD processto deposit uniform nitrogen free films from the ALD method describedabove is that the dosages of the silicon precursor and oxygen precursorcan be greater than the dosages used for ALD, and thus the depositionrate can be much higher than ALD. The deposition temperature, may rangefrom about ambient temperature to about 700° C. or from 400° C. to about700° C.

In certain embodiments, the resultant dielectric films or coatings canbe exposed to a post-deposition treatment such as, but not limited to, aplasma treatment, chemical treatment, ultraviolet light exposure,electron beam exposure, and/or other treatments to affect one or moreproperties of the film.

The dielectric films described herein have a dielectric constant of 7 orless. Preferably, the films have a dielectric constant of about 6 orbelow, or about 5 or below, or about 4 or below.

As mentioned previously, the method described herein may be used todeposit a dielectric film on at least a portion of a substrate. Examplesof suitable substrates include but are not limited to, silicon, SiO₂,Si₃N₄, organosilica glass (OSG), fluorinated silica glass (FSG), siliconcarbide, hydrogenated silicon carbide, silicon nitride, hydrogenatedsilicon nitride, silicon carbonitride, hydrogenated siliconcarbonitride, boronitride, antireflective coatings, photoresists,organic polymers, porous organic and inorganic materials, metals such ascopper and aluminum, and diffusion barrier layers such as but notlimited to TiN, Ti(C)N, TaN, Ta(C)N, Ta, W, or WN. The films arecompatible with a variety of subsequent processing steps such as, forexample, chemical mechanical planarization (CMP) and anisotropic etchingprocesses. The substrate may be uniform or patterned, smooth or havingfeatures, planar or non-planar.

The deposited dielectric films have applications which include but arenot limited to computer chips, optical devices, magnetic informationstorages, coatings on a supporting material or substrate,microelectromechanical systems (MEMS), nanoelectromechanical systems,thin film transistor (TFT), and liquid crystal displays (LCD).

The following examples illustrate the method for preparing a dielectricfilm described herein and are not intended to limit it in any way.

EXAMPLES

In the following examples, unless stated otherwise, properties wereobtained from sample films that were deposited onto medium resistivity(8-12 Ωcm) single crystal silicon wafer substrates. In the present studyCVD depositions were performed using a low pressure chemical vapordeposition (LPCVD) horizontal furnace or an ATV PEO 612 furnace. Theprecursors were delivered to the furnace using vapor draw and linetemperatures that were adjusted based on the vapor pressures for theprecursor material. The Atomic Layer Deposition tool used for this studyis an R&D designed horizontal tube furnace with attached environmentaloven for heated precursor delivery. The system is capable of performingdepositions from room temperature to 700° C. All plasma-baseddepositions were performed on an Applied Materials Precision 5000 systemin a 200 mm DXZ chamber fitted with an Advanced Energy 2000 radiofrequency (RF) generator, using a TEOS process kit.

In the following examples, thickness and optical properties such asrefractive index of the dielectric films were performed using standardrefelctometry or ellipsometry measurement system such as, for example,on a FilmTek 2000SE ellipsometer, and using well-known data fittingtechniques

The characterization of the chemical composition of the films isaccomplished using a Physical Electronics 5000VersaProbe XPSSpectrometer, which is equipped with multi-channel plate detectors (MCD)and an Al monochromatic X-ray source. The XPS data are collected usingAlk_(α) X-ray excitation (25 mA and 15 kV). The low-resolution surveyspectra are collected at 117 eV pass energy, 50 millisecond dwell time,and 1.0 eV/step. The high-resolution regional spectra are collected at23.5 eV pass energy, 50 msec dwell time, 0.1 eV/step. The analysis areais 100 μm at a take-off-angle of 45°. The quantitative elementalanalyses were determined by measuring the peak areas from thehigh-resolution regional spectra and applying the transmission-functioncorrected atomic sensitivity factors. A PHI Summitt software is used fordata collection and CasaXPS software is used for data analysis. The etchrate is calibrated against 203 nm SiO₂/Si and is approximately 120Å/min.

The etch test is carried out in 6:1 Buffered Oxide Etch (“BOE”) solutionwhich has a volume ratio of 6 parts 40% NH₄F in water and 1 part 49% HFsolution in water to form a buffered oxide etch. Exemplary dielectricfilms are placed in HF solution for 30 seconds, followed by rinsing indeionized (DI) water and drying before being measured again for the lossof the material during the etch. The process is repeated until the filmsare completely etched. The etch rate is then calculated from the slopeof the etch time vs. thickness etched. The films, along with thecomparative silicon oxide films, are measured for their thickness at 3different points across the film surface before and after etch.

Fourier Transform Infrared Spectroscopy (FTIR) data was collected on thewafers using a Thermo Nicolet Nexus 470 system or similar system,equipped with a DTGS KBR detector and KBr beam splitter. Backgroundspectra were collected on similar medium resistivity wafers to eliminateCO₂ and water from the spectra. Data was typically obtained in the rangeof from 4000 to 400 cm⁻¹ by collecting 32 scans with a resolution of 4cm⁻¹. All films were commonly baseline corrected, intensities werenormalized to a film thickness of 500 nm, and peaks areas and heights ofinterest were determined.

The dielectric constant of each sample film was determined according toASTM Standard D150-98. Dielectric constants, k, are calculated from aC-V curve measured using, for example, a MDC 802B-150 Mercury Probe. Itconsists of a probe stage that holds the sample and forms electricalcontacts on the film to be measured, a Keithley 236 source meter andHP4284A LCR meter for C-V measurement. Si wafers that have relativelylow electrical resistivity (sheet resistance less than 0.02 ohm-cm) areused to deposit the films for C-V measurement. Front contact mode isused to form electrical contacts to the film. Liquid metal (mercury) ispushed out through a thin tube from a reservoir to the surface of thewafer to form two electrically conductive contacts. The contact areasare calculated based on the diameter of the tube from which the mercuryis pushed out. The dielectric constant is then calculated from formulak=the capacitance×the contact area/the thickness of the film.

Example 1 Deposition of Silicon Oxide Films by Chemical Vapor DepositionUsing Di-Tert-Butoxysilane (DTBOS)

Exemplary silicon oxide films were deposited using the precursors DTBOSand oxygen as the oxygen source. The deposition conditions for each filmare provided in Table 1. The characteristics of each film are providedin Table 2.

TABLE 1 Depo- Precursor Depo- sition Flow Precursor Oxygen sitionExemplary Temp. Pressure Setting Flow Flow Time Film (° C.) (mtorr) (%)(sccm) (sccm) (min.) 1 550 250 30 14.11 20 50 2 650 250 30 14.11 40 50 3600 500 30 12.67 40 99 4 650 500 30 13.46 40 99 5 650 250 30 14.26 40 996 650 250 30 10.46 40 30 sccm = standard cubic centimeters per minute

TABLE 2 Average Refractive Exem- Film Film Index Deposition plaryThickness Thickness Refractive Uniformity Rate Film (Å) Uniformity Index(%) (Å/min.) 1 115 1.70 1.3318 6.0057 2.30 2 555 1.46 1.4733 0.202211.10 3 554 1.09 1.4734 0.2156 5.59 4 548 1.46 1.4719 0.2650 5.56 5 5821.40 1.4448 0.2579 5.87 6 147 4.44 1.4249 3.0116 4.89

A typical XPS of one or the exemplary films from Example 1 that ishighly uniform, high purity film free of elements, such as carbon andnitrogen, is shown in FIG. 1 and the composition of the differentelements is also listed in Table 3. As can be seen from both FIG. 1 andTable 3, neither carbon nor nitrogen is detected in the films.

TABLE 3 Chemical Composition of the high purity Silicon Dioxide Film (inatomic %) Exemplary Sputter Film depth (Å) O N C Si 1 50 64.0 ND ND 36.02 200 68.1 ND ND 31.9 3 200 68.9 ND ND 31.1 4 200 68.1 ND ND 31.9 Table3B. Chemical Composition of the Nitrogen Free Silicon Dioxide Film (inatomic %), corresponding to the spectra shown in FIG. 1. Elements O Si CN Concentration 64.2 34.1 1.5 0 ND - quantities below detection limit

Example 2 The Thickness Uniformity of the Film

The nitrogen free silicon dioxide films formed using the methods andcompositions described herein are measured for their thickness using anellipsometer. In contrast to the poor uniformity of the nitrogen silicondioxide films deposited using currently available methods, the filmsdeposited using methods described in this invention show drasticimprovement in the film uniformity within a substrate (or a wafer). Acomparison in the film thickness uniformity between the films used thesaid invention and the ones used the existing methods is provided inFIG. 2 where the x-axis represents the position of measurement at awafer substrate and y-axis represents the deviation of the thickness ateach point from the average thickness of the film. It can be seen fromFIG. 2 that the film deposited using the method described herein is muchmore uniform across the wafer substrates compared to other films.A commonly used formula for thickness uniformity for the thin films,that is, The uniformity=(Maximum thickness−Minimumthickness)/(2*Average)*100%

The thickness uniformity of the films formed using the method describedherein is provided in Table 4. The results in Table 4 show that the filmuniformity from the method described herein is more than 10 times betterthan the films formed using the existing methods (precursors).

TABLE 4 The Thickness Uniformity Of The Different Silicon Dioxide Films(%) Deposited with di-tert-butoxysilane t-butylsilane Diethylsilane Filmuniformity 1.43 35.0 18.74

Example 3 K And Dielectric Constant

The dielectric constant of the silicon oxide film formed using themethod described herein is derived from the C-V plot shown in FIG. 3.For a known thickness of the film and contact area of the mercury probeused, the dielectric constant of the film is found to be 4.47.

Example 4 Comparison of Films Deposited By Plasma-Enahnced CVD UsingDi-Tert-Butoxysilane Precursor And Tetraethyloxysilane Under DifferentProcess Conditions

In the following examples, unless stated otherwise, properties wereobtained from sample films that were deposited onto medium resistivity(8-12 Ωcm) single crystal silicon wafer substrates. Depositiontemperatures were 200, 300, and 400° C.

Table 5 provides a summary of the three different processing conditionsthat was used for comparing the precursors or di-tert-butoxysilane(DTBOS) and a comparative precursor tetraethyloxysilane (TEOS). Thethree different processing conditions are labeled BL-1, BL-2 and BL-3.

TABLE 5 Process condition BL-1 BL-2 BL-3 Precursor flow (sccm) 107 45 27He (carrier) 1000 1000 1000 O2 (sccm) 1100 1100 700 Pressure (torr) 8.28.2 3.5 Spacing (mils) 500 500 800 Power density 2.27 2.27 0.87 (W/cm2)

Table 6 provides a comparison of K value, deposition rate and wet etchrate for TEOS vs. DTBOS for the BL1 condition. The deposition rate ofDTBOS is higher than TEOS for the same volumetric flow of precursor.This shows that DTBOS may be more efficient than TEOS for PECVDdeposition. Further, the WER of the DTBOS-deposited film is equal to orbetter than that or the TEOS-deposited films. This implies equal orbetter density of the SiO₂ films deposited using the DTBOS precursor.

TABLE 6 D/R WER A/min, K value (A/min) 6:1 BOE) T TEOS DTBOS TEOS DTBOSTEOS DTBOS 200 4.99 5.78 5310 6174 4278 4096 300 4.43 4.55 4644 52002958 2844 400 4.21 4.16 3072 3714 2100 1888

Table 7 provides a comparison of K value, deposition rate and wet etchrate for TEOS vs. DTBOS deposited films using the BL2 processingcondition. The deposition rate of DTBOS is higher than TEOS for the samevolumetric flow of precursor. This proves the higher efficiency of theDTBOS precursor for PECVD deposition. However, the WER is equal orbetter than that for TEOS films. This implies equal or better density ofthe SiO₂ films formed from DTBOS.

TABLE 7 D/R WER (A/min, K value (A/min) 6:1 BOE) T TEOS DTBOS TEOS D/RDTBOS D/R TEOS DTBOS 200 4.65 4.89 1201 1722 2958 2602 300 4.39 4.521003 1430 2304 1980 400 4.19 4.46 1045 1004 1840 1726

Table 8 provides a comparison of K value, deposition rate and wet etchrate for TEOS vs. DTBOS for the BL3 processing condition. The depositionrate of DTBOS is equivalent to TEOS for the same volumetric flow ofprecursor. However, the WER is clearly better than that for TEOS films.This implies better density of the SiO2 films formed from DTBOS. Also,the K values for DTBOS are lower, implying less moisture absorption.

TABLE 8 D/R WER (A/min, K value (A/min) 6:1 BOE) T TEOS DTBOS TEOS DTBOSTEOS DTBOS 200 5.9 5.4 1014 1003 5382 4075 300 4.45 4.38 818 803 35043006 400 4.25 4.13 655 416 2340 2007

FIG. 4 shows a comparison of WER of films deposited using all of thebaseline conditions and deposition temperatures described in Table 3(e.g., BL-1, BL-2, and BL-3 and 200°, 300°, and 400° C.). DTBOS filmshave lower WER for the same K, implying higher density and higherquality oxide films. Thus, DTBOS can produce superior quality films toTEOS at relatively low temperatures for PECVD depositions.

Table 9 below provides the breakdown voltage (Vbd) comparison of TEOSand DTBOS at different temperatures under process conditions BL1, BL2and BL3 defined above in Table 5. In general, the breakdown voltages are8-12 MV/cm, and are comparable between the two precursors. FIGS. 5, 6,and 7 show the leakage current vs. electric field plots for TEOSdeposited films vs. DTBOS deposited films at 200° C. and 300° C.depositions.

FIG. 5 provides leakage current vs. electric field plots for TEOS vs.DTBOS at 200° C. and 300° C. depositions for BL1 condition. As DTBOS hashigher K and WER at 200° C. than TEOS for BL1, the impact on filmleakage is also seen. However, this is the only condition where DTBOSshows poorer leakage performance than TEOS. As seen with 300° C. dataand with FIGS. 6 and 7, DTBOS SiO₂ leakage is generally superior to TEOSSiO₂ leakage.

FIG. 6 provides the leakage current vs. electric field plots for TEOSvs. DTBOS at 200° C. and 300° C. depositions for BL2 condition. Eventhough DTBOS has higher D/R; the leakage of DTBOS SiO₂ films are lowerthan that for TEOS, demonstrating excellent electrical quality andsupporting the WER data.

FIG. 7 provides the leakage current vs. electric field plots for TEOSvs. DTBOS at 200° C. and 300° C. depositions for BL3 condition. Overallfor BL3, leakage is lower with DTBOS than TEOS.

TABLE 9 TEOS DTBOS BL1 200 C. 9.6 12.7 (leaky) 300 C. 9.68 10.26 400 C.7.9 9.26 BL2 200 C. 10.4 10.29 300 C. 10.7 8.67 400 C. 9.5 9.7 BL3 200C. 10.9 9.89 (leaky) 300 C. 9.7 (leaky) 9.74 400 C. 9 9.61

In FIG. 8 are provided dynamic secondary ion mass spectrometry data(D-SIMS) of DTBOS compared to bis(tertiarybutyl)aminosilane, (aka.BTBAS). It is known from XPS data for BTBAS, that CVD processestypically provide ˜10 atomic % C (excluding hydrogen). This compares toTable 3 where carbon levels in DTBOS films are non-detectable. TheD-SIMS data indicates approximately two orders of magnitude lower carboncontent, suggesting that the actual carbon levels in these films,inferred from comparison to BTBAS XPS data, may be <0.1 atomic %.

ALD deposition data from DTBOS is provided in Table 10. Depositions ofsilicon oxide are demonstrated by the appropriate refractive index forthese films.

TABLE 10 Source Ozone Average Wafer Pulse Pulse # of Thickness AverageAngstroms/ Uniformity Temp. (seconds) (seconds) Cycles (A) RI cycle (%)400 0.5 2.0 500 41 1.3379 0.0813 20.90 600 0.5 2.0 500 75 1.5547 0.150315.30 600 0.5 2.0 500 80 1.5425 0.1607 18.67 650 0.5 2.0 500 239 1.43650.4783 34.29 300 1.0 2.0 500 27 1.4457 0.0543 25.77 400 1.0 2.0 500 481.2477 0.0967 10.34 500 1.0 2.0 500 50 1.4343 0.1000 9.00 600 1.0 2.0500 114 1.5324 0.2287 19.24 650 1.0 2.0 500 335 1.4574 0.6690 32.29 6002.0 2.0 500 282 1.3983 0.5647 32.05 650 2.0 2.0 500 559 1.4476 1.118032.56

The present invention also includes a package with the reactants, asdescribed above, comprising an electropolished stainless steel vesselwith an inlet and an outlet having high purity low deadspace valves,containing tertiarybutoxysilane, isopropoxysilane, ethoxysilane,n-butoxysilane, isobutoxysilane, methoxysilane, phenoxysilane,di-tertiary-butoxysilane, diiso-propoxysilane, diethoxysilane,di-n-butoxysilane, diisobutoxysilane, dimethoxysilane, diphenoxysilane,tri-tertiary-butoxysilane, triiso-propoxysilane, triethoxysilane,tri-n-butoxysilane, triiso-butoxysilane, trimethoxysilane, ortriphenoxysilane.

The reactants and methods of the present invention can be used tomanufacture a device selected from the group consisting of: opticaldevices, magnetic information storages, coatings on a supportingmaterial or substrate, microelectromechanical systems (MEMS),nanoelectromechanical systems, thin film transistor (TFT), and liquidcrystal displays (LCD).

The invention claimed is:
 1. A method for forming a solid dielectricfilm on at least one surface of a substrate, the method comprising:providing the at least one surface of the substrate in a reactionchamber; and introducing into the reaction chamber a silicon precursorto form the solid dielectric film comprising at least one precursorselected from the group of precursors having the following Formulas I,II, and III:

where R, R¹, and R² in Formulas I, II, and III are each independently analkyl group, an aryl, an acyl group, or combinations thereof;introducing into the reaction chamber at least one source comprising anoxygen source wherein the at least one precursor and the at least onesource react to form the solid dielectric film on the at least onesurface of the substrate; and wherein the silicon precursor comprisesdi-tert-pentoxysilane.
 2. The method of claim 1 wherein at least onesource further comprises a nitrogen source.
 3. The method of claim 1wherein the forming is at least one selected from cyclic chemical vapordeposition, plasma enhanced chemical vapor deposition, or atomic layerdeposition.
 4. The method of claim 1 wherein the silicon precursorcomprises di-tert-butoxysilane.
 5. The method of claim 2 wherein theoxygen source comprises oxygen.
 6. The method of claim 2 wherein theoxygen source comprises ozone.
 7. The method of claim 1 using a thermalCVD process, wherein the dielectric film comprises up to about 30 atomicweight % nitrogen as measured by XPS.
 8. The film produced from themethod of claim 1 having the composition Si_(a)O_(b)N_(c)C_(d)H_(e)B_(f)where a is from 10-50 at %, b is from 10 to to 70 at %, c is from 0 to30 at %, d is from 0 to 30 at %, e is from 0 to 50 at %, and f is from 0to 30 at %.
 9. A device manufactured using the process of claim 1selected from the group consisting of: optical devices, magneticinformation storages, coatings on a supporting material or substrate,microelectromechanical systems (MEMS), nanoelectromechanical systems,thin film transistor (TFT), and liquid crystal displays (LCD).
 10. Amethod of forming a solid dielectric film comprising silicon and oxygenvia an atomic layer deposition process, the method comprising the stepsof: a. placing a substrate into an ALD reactor; b. introducing into theALD reactor a silicon precursor comprising at least one selected fromthe group of precursors having the following Formulas I, II, and III:

where R, R¹, and R² in Formulas I, II, and III are each independently analkyl group, an aryl, an acyl group, or combinations thereof; c. purgingthe ALD reactor with a gas; d. introducing an oxygen source into the ALDreactor; e. purging the ALD reactor with the gas; f. repeating the stepsb through d until a desired thickness of the solid dielectric film isobtained wherein the dielectric film comprises from up to about 30atomic weight % nitrogen as measured by XPS; and wherein the siliconprecursor comprises di-tert-pentoxysilane.
 11. The method of claim 10wherein a nitrogen source thereof is introduced into the ALD reactor.